Electron microscopy characterization of Au/Ni contacts to p-type InP
Identifieur interne : 000547 ( Main/Exploration ); précédent : 000546; suivant : 000548Electron microscopy characterization of Au/Ni contacts to p-type InP
Auteurs : RBID : ISTEX:11664_1988_Article_BF02652121.pdfEnglish descriptors
Abstract
The change in contact resistance produced by annealing Au/Ni metallizations top-type InP, has been correlated to the microstructural changes by means of electron microscopy techniques. The contacts were initially non-ohmic, but decreased in resistance by a factor of 24 upon annealing to temperatures of up to 400° C. The metallization was quite unstable,i.e. the Ni reacted readily with InP, even during deposition. Annealing was characterized by the formation of a series of Ni-P phases, as well as inward diffusion of Au and outward diffusion of In, which resulted in the formation of Au-In compounds. These reactions aided Ni doping of the InP, leading to the lower contact resistance.
DOI: 10.1007/BF02652121
Links toward previous steps (curation, corpus...)
Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title>Electron microscopy characterization of Au/Ni contacts to p-type InP</title>
<author><name>D. G. Ivey</name>
<affiliation wicri:level="1"><mods:affiliation>Department of Mining, Metallurgical and Petroleum Engineering, University of Alberta, Edmonton, Alberta, Canada</mods:affiliation>
<country xml:lang="fr">Canada</country>
<wicri:regionArea>Department of Mining, Metallurgical and Petroleum Engineering, University of Alberta, Edmonton, Alberta</wicri:regionArea>
<wicri:noRegion>Alberta</wicri:noRegion>
</affiliation>
</author>
<author><name>R. Bruce</name>
<affiliation wicri:level="1"><mods:affiliation>Bell Northern Research, Station C, P.O. Box 3511, Ottawa, Ontario, Canada</mods:affiliation>
<country xml:lang="fr">Canada</country>
<wicri:regionArea>Bell Northern Research, Station C, P.O. Box 3511, Ottawa, Ontario</wicri:regionArea>
<wicri:noRegion>Ontario</wicri:noRegion>
</affiliation>
</author>
<author><name>G. R. Piercy</name>
<affiliation wicri:level="1"><mods:affiliation>Department of Materials Science and Engineering, McMaster University, Hamilton, Ontario, Canada</mods:affiliation>
<country xml:lang="fr">Canada</country>
<wicri:regionArea>Department of Materials Science and Engineering, McMaster University, Hamilton, Ontario</wicri:regionArea>
<wicri:noRegion>Ontario</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="RBID">ISTEX:11664_1988_Article_BF02652121.pdf</idno>
<date when="1988">1988</date>
<idno type="doi">10.1007/BF02652121</idno>
<idno type="wicri:Area/Main/Corpus">000195</idno>
<idno type="wicri:Area/Main/Curation">000195</idno>
<idno type="wicri:Area/Main/Exploration">000547</idno>
</publicationStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Electron microscopy</term>
<term>Indium phosphide</term>
<term>Ohmic contacts</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="eng">The change in contact resistance produced by annealing Au/Ni metallizations top-type InP, has been correlated to the microstructural changes by means of electron microscopy techniques. The contacts were initially non-ohmic, but decreased in resistance by a factor of 24 upon annealing to temperatures of up to 400° C. The metallization was quite unstable,i.e. the Ni reacted readily with InP, even during deposition. Annealing was characterized by the formation of a series of Ni-P phases, as well as inward diffusion of Au and outward diffusion of In, which resulted in the formation of Au-In compounds. These reactions aided Ni doping of the InP, leading to the lower contact resistance.</div>
</front>
</TEI>
<mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="2121858de2951cbf025d094d06bcc4518a52205b"><titleInfo lang="eng"><title>Electron microscopy characterization of Au/Ni contacts to p-type InP</title>
</titleInfo>
<name type="personal"><namePart type="given">D. G.</namePart>
<namePart type="family">Ivey</namePart>
<role><roleTerm type="text">author</roleTerm>
</role>
<affiliation>Department of Mining, Metallurgical and Petroleum Engineering, University of Alberta, Edmonton, Alberta, Canada</affiliation>
</name>
<name type="personal"><namePart type="given">R.</namePart>
<namePart type="family">Bruce</namePart>
<role><roleTerm type="text">author</roleTerm>
</role>
<affiliation>Bell Northern Research, Station C, P.O. Box 3511, Ottawa, Ontario, Canada</affiliation>
</name>
<name type="personal"><namePart type="given">G. R.</namePart>
<namePart type="family">Piercy</namePart>
<role><roleTerm type="text">author</roleTerm>
</role>
<affiliation>Department of Materials Science and Engineering, McMaster University, Hamilton, Ontario, Canada</affiliation>
</name>
<typeOfResource>text</typeOfResource>
<genre>Original Paper</genre>
<originInfo><publisher>Springer-Verlag, New York</publisher>
<dateCreated encoding="w3cdtf">1988-02-22</dateCreated>
<dateValid encoding="w3cdtf">2007-06-15</dateValid>
<copyrightDate encoding="w3cdtf">1988</copyrightDate>
</originInfo>
<language><languageTerm type="code" authority="iso639-2b">eng</languageTerm>
</language>
<physicalDescription><internetMediaType>text/html</internetMediaType>
</physicalDescription>
<abstract lang="eng">The change in contact resistance produced by annealing Au/Ni metallizations top-type InP, has been correlated to the microstructural changes by means of electron microscopy techniques. The contacts were initially non-ohmic, but decreased in resistance by a factor of 24 upon annealing to temperatures of up to 400° C. The metallization was quite unstable,i.e. the Ni reacted readily with InP, even during deposition. Annealing was characterized by the formation of a series of Ni-P phases, as well as inward diffusion of Au and outward diffusion of In, which resulted in the formation of Au-In compounds. These reactions aided Ni doping of the InP, leading to the lower contact resistance.</abstract>
<subject lang="eng"><genre>Key words</genre>
<topic>Ohmic contacts</topic>
<topic>indium phosphide</topic>
<topic>electron microscopy</topic>
</subject>
<relatedItem type="series"><titleInfo type="abbreviated"><title>JEM</title>
</titleInfo>
<titleInfo><title>Journal of Electronic Materials</title>
<partNumber>Year: 1988</partNumber>
<partNumber>Volume: 17</partNumber>
<partNumber>Number: 5</partNumber>
</titleInfo>
<genre>Archive Journal</genre>
<originInfo><dateIssued encoding="w3cdtf">1988-09-01</dateIssued>
<copyrightDate encoding="w3cdtf">1988</copyrightDate>
</originInfo>
<subject usage="primary"><topic>Chemistry</topic>
<topic>Optical and Electronic Materials</topic>
<topic>Characterization and Evaluation of Materials</topic>
<topic>Solid State Physics and Spectroscopy</topic>
<topic>Electronics and Microelectronics, Instrumentation</topic>
</subject>
<identifier type="issn">0361-5235</identifier>
<identifier type="issn">Electronic: 1543-186X</identifier>
<identifier type="matrixNumber">11664</identifier>
<identifier type="local">IssueArticleCount: 20</identifier>
<recordInfo><recordOrigin>The Metallurgical of Society of AIME, 1988</recordOrigin>
</recordInfo>
</relatedItem>
<identifier type="doi">10.1007/BF02652121</identifier>
<identifier type="matrixNumber">Art6</identifier>
<identifier type="local">BF02652121</identifier>
<accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition>
<accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition>
<accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition>
<accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition>
<accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition>
<accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition>
<part><extent unit="pages"><start>373</start>
<end>380</end>
</extent>
</part>
<recordInfo><recordOrigin>The Metallurgical of Society of AIME, 1988</recordOrigin>
<recordIdentifier>11664_1988_Article_BF02652121.pdf</recordIdentifier>
</recordInfo>
</mods>
</record>
Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV1/Data/Main/Exploration
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 000547 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Exploration/biblio.hfd -nk 000547 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien |wiki= *** parameter Area/wikiCode missing *** |area= IndiumV1 |flux= Main |étape= Exploration |type= RBID |clé= ISTEX:11664_1988_Article_BF02652121.pdf |texte= Electron microscopy characterization of Au/Ni contacts to p-type InP }}
This area was generated with Dilib version V0.5.81. |