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Electron microscopy characterization of Au/Ni contacts to p-type InP

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Electron microscopy characterization of Au/Ni contacts to p-type InP

Auteurs : RBID : ISTEX:11664_1988_Article_BF02652121.pdf

English descriptors

Abstract

The change in contact resistance produced by annealing Au/Ni metallizations top-type InP, has been correlated to the microstructural changes by means of electron microscopy techniques. The contacts were initially non-ohmic, but decreased in resistance by a factor of 24 upon annealing to temperatures of up to 400° C. The metallization was quite unstable,i.e. the Ni reacted readily with InP, even during deposition. Annealing was characterized by the formation of a series of Ni-P phases, as well as inward diffusion of Au and outward diffusion of In, which resulted in the formation of Au-In compounds. These reactions aided Ni doping of the InP, leading to the lower contact resistance.

DOI: 10.1007/BF02652121

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Le document en format XML

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<div type="abstract" xml:lang="eng">The change in contact resistance produced by annealing Au/Ni metallizations top-type InP, has been correlated to the microstructural changes by means of electron microscopy techniques. The contacts were initially non-ohmic, but decreased in resistance by a factor of 24 upon annealing to temperatures of up to 400° C. The metallization was quite unstable,i.e. the Ni reacted readily with InP, even during deposition. Annealing was characterized by the formation of a series of Ni-P phases, as well as inward diffusion of Au and outward diffusion of In, which resulted in the formation of Au-In compounds. These reactions aided Ni doping of the InP, leading to the lower contact resistance.</div>
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<abstract lang="eng">The change in contact resistance produced by annealing Au/Ni metallizations top-type InP, has been correlated to the microstructural changes by means of electron microscopy techniques. The contacts were initially non-ohmic, but decreased in resistance by a factor of 24 upon annealing to temperatures of up to 400° C. The metallization was quite unstable,i.e. the Ni reacted readily with InP, even during deposition. Annealing was characterized by the formation of a series of Ni-P phases, as well as inward diffusion of Au and outward diffusion of In, which resulted in the formation of Au-In compounds. These reactions aided Ni doping of the InP, leading to the lower contact resistance.</abstract>
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